Athermal annealing of Si-implanted GaAs and InP
Identifieur interne : 00C204 ( Main/Repository ); précédent : 00C203; suivant : 00C205Athermal annealing of Si-implanted GaAs and InP
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Abstract
GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the irradiated spot. The crater is surrounded by a dark-colored ring-shaped region which is annealed by mechanical energy generated by rapidly expanding hot plasma that formed on the exposed spot. The electrical characteristics of this annealed region are comparable to those of a halogen-lamp annealed sample. No redistribution of impurities due to transient diffusion is observed in the implant tail region. In x-ray diffraction measurements, a high angle side satellite peak due to lattice strain was observed in the crater and near crater regions of the athermally annealed sample in addition to the main Bragg peak that corresponds to the pristine sample. This high angle side satellite peak is not observed in regions away from the crater (≥5 mm from the center of the crater in GaAs). © 2003 American Institute of Physics.
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Rao</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>George Washington University, Washington, DC 20052</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>George Washington University, Washington</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Material Science and Engineering, Australian National University, Canberra, ACT 0200, Australia</s1></inist:fA14><country xml:lang="fr">Australie</country><wicri:regionArea>Department of Material Science and Engineering, Australian National University, Canberra, ACT 0200</wicri:regionArea><wicri:noRegion>ACT 0200</wicri:noRegion></affiliation></author><author><name sortKey="Brookshire, J" uniqKey="Brookshire J">J. Brookshire</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation></author><author><name sortKey="Mitra, S" uniqKey="Mitra S">S. Mitra</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation></author><author><name sortKey="Qadri, Syed B" uniqKey="Qadri S">Syed B. Qadri</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation></author><author><name sortKey="Fischer, R" uniqKey="Fischer R">R. Fischer</name></author><author><name sortKey="Grun, J" uniqKey="Grun J">J. Grun</name></author><author><name sortKey="Papanicolaou, N" uniqKey="Papanicolaou N">N. Papanicolaou</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation></author><author><name sortKey="Yousuf, M" uniqKey="Yousuf M">M. Yousuf</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation></author><author><name sortKey="Ridgway, M C" uniqKey="Ridgway M">M. C. Ridgway</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, George Mason University, Fairfax</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0284330</idno><date when="2003-07-01">2003-07-01</date><idno type="stanalyst">PASCAL 03-0284330 AIP</idno><idno type="RBID">Pascal:03-0284330</idno><idno type="wicri:Area/Main/Corpus">00D209</idno><idno type="wicri:Area/Main/Repository">00C204</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deformation</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Ion implantation</term><term>Laser ablation technique</term><term>Laser beam annealing</term><term>Laser beam effects</term><term>Silicon</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6172C</term><term>6180B</term><term>8105E</term><term>6847F</term><term>6182F</term><term>7920D</term><term>6110N</term><term>8165</term><term>6172V</term><term>6180J</term><term>8540R</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Silicium</term><term>Recuit faisceau laser</term><term>Effet faisceau laser</term><term>Diffraction RX</term><term>Méthode ablation laser</term><term>Déformation</term><term>Implantation ion</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the irradiated spot. The crater is surrounded by a dark-colored ring-shaped region which is annealed by mechanical energy generated by rapidly expanding hot plasma that formed on the exposed spot. The electrical characteristics of this annealed region are comparable to those of a halogen-lamp annealed sample. No redistribution of impurities due to transient diffusion is observed in the implant tail region. In x-ray diffraction measurements, a high angle side satellite peak due to lattice strain was observed in the crater and near crater regions of the athermally annealed sample in addition to the main Bragg peak that corresponds to the pristine sample. This high angle side satellite peak is not observed in regions away from the crater (≥5 mm from the center of the crater in GaAs). © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Athermal annealing of Si-implanted GaAs and InP</s1></fA08><fA11 i1="01" i2="1"><s1>RAO (Mulpuri V.)</s1></fA11><fA11 i1="02" i2="1"><s1>BROOKSHIRE (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>MITRA (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>QADRI (Syed B.)</s1></fA11><fA11 i1="05" i2="1"><s1>FISCHER (R.)</s1></fA11><fA11 i1="06" i2="1"><s1>GRUN (J.)</s1></fA11><fA11 i1="07" i2="1"><s1>PAPANICOLAOU (N.)</s1></fA11><fA11 i1="08" i2="1"><s1>YOUSUF (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>RIDGWAY (M. C.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030-4444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375</s1></fA14><fA14 i1="03"><s1>Plasma Physics Division, U.S. Naval Research Laboratory, Washington, DC 20375</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375</s1></fA14><fA14 i1="05"><s1>George Washington University, Washington, DC 20052</s1></fA14><fA14 i1="06"><s1>Department of Material Science and Engineering, Australian National University, Canberra, ACT 0200, Australia</s1></fA14><fA20><s1>130-135</s1></fA20><fA21><s1>2003-07-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0284330</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ∼2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the irradiated spot. The crater is surrounded by a dark-colored ring-shaped region which is annealed by mechanical energy generated by rapidly expanding hot plasma that formed on the exposed spot. The electrical characteristics of this annealed region are comparable to those of a halogen-lamp annealed sample. No redistribution of impurities due to transient diffusion is observed in the implant tail region. In x-ray diffraction measurements, a high angle side satellite peak due to lattice strain was observed in the crater and near crater regions of the athermally annealed sample in addition to the main Bragg peak that corresponds to the pristine sample. 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